Plasma-free dry-chemical texturing process for high-efficiency multicrystalline silicon solar cells

Latest research paper showcasing the ADE dry texturing technology for mc-Si wafers.

 

In this paper, we study the influence of modifying the geometry of nanotexture on its electrical properties. Nanotexture is formed by an industrially feasible dry-chemical etching process performed entirely in atmospheric pressure conditions. A surface modification process is developed that allows low surface recombination velocities (Seff,min ? 10 cm/s) on nanotextured surfaces. By simultaneously improving the surface passivation and the emitter diffusion processes, we achieve an equivalent passivation level (VOC,impl  670 mV) for nanotextured surfaces to that of reference textured surfaces after applying either PECVD or ALD based deposition techniques.

 

• Bishal Kafle^{a, ,}o Freund^a,
• Abdul Mannan^a,
• Laurent Clochard^b,
• Edward Duffy^b,
• Sabrina Werner^a,
• Pierre Saint-Cast^a,
• Marc Hofmann^a,
• Jochen Rentsch^a,
• Ralf Preu^a

a - Fraunhofer ISE ; b- NINES PV

 

Keywords

 

• black silicon;
• atmospheric pressure;
• dry texturing;
• silicon nitride;
• surface passivation;
• emitter recombination

 

DOI: 10.1016/j.egypro.2016.07.113