Industrial tool
Our ADE-6000 industrial tools deliver throughput values beyond the current industry roadmap. UNIVERSAL etching and texturing equipment and process for any type of silicon wafer or layer; a trully future-proof solution.
Our tools are designed using multiple parallel lines of processing and atmospheric pressure chemical reactors similar to the one used in our development tool. The industrial process is facilitated by the use of on-site generation of the etching gas, providing 100% concentration and delivering low cost of ownership.
> ADE SS Poly-ETCH
This tool was designed for single side etching of poly-silicon layers, especially for TOPCON solar cells and other advanced solar cell architectures.
The ADE SS Poly-ETCH can remove selectively and at very high etch rate the few hundreds of nanometres of a-Si or poly-silicon from one side of the wafer.
- Non-metallic soft handling conveyor
- Low temperature process
- Up to 12,000 wafer/hour
- Configurations for all wafer sizes up to G12
- Fully automated - Integrated safety matrix
- Low COO through on-site gas generation
> Very small footprint
Modular multi-lanes configurations.
> ADE SS nano-TEX
This tool was designed for single side texturing of silicon wafers. The ADE SS nano-TEX can texture ANY type of Si wafers, removing only a small amount of silicon.
Low reflectivity texture: Outperforming industry standards with wafer surface reflectivity Rw values adjustable to lower levels.
In-line, scalable process
Inline process, high throughput, and on-site generation of etching gases facilitate scalability of the manufacturing process.
NO Green House Gases
Improves the overall sustainability of the manufacturing process; process without any Green House Gases (GHG)resulting in Zero Global Warming Potential (GWP).
Mask-less, single-side processing
The wafer's rear side is preserved. Enables advanced cell architectures, simplify process flow, whilst also reducing processing costs.
Universal, futur-proof Silicon dry etch
Universal silicon etching/texturing solution. Enables the use of diamond wire cut wafers, epitaxial wafers, cast wafers, mono and multi crystalline. Also suitable for Si deposited layers, like amorphous silicon (a-Si) and polysilicon layers.
